Electrical properties of Ta(Si)N films prepared by atomic layer deposition from tert-butylimido-tris-diethylamido tantalum, silane and hydrogen plasma. [electronic resource]

By: Contributor(s): Producer: 20130807Description: 4097-100 p. digitalISSN:
  • 1533-4880
Online resources: In: Journal of nanoscience and nanotechnology vol. 13
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Publication Type: Journal Article

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