Electrical properties of Ta(Si)N films prepared by atomic layer deposition from tert-butylimido-tris-diethylamido tantalum, silane and hydrogen plasma.

Park, Seung-Gon

Electrical properties of Ta(Si)N films prepared by atomic layer deposition from tert-butylimido-tris-diethylamido tantalum, silane and hydrogen plasma. [electronic resource] - Journal of nanoscience and nanotechnology Jun 2013 - 4097-100 p. digital

Publication Type: Journal Article

1533-4880

10.1166/jnn.2013.7012 doi