Electrical properties of Ta(Si)N films prepared by atomic layer deposition from tert-butylimido-tris-diethylamido tantalum, silane and hydrogen plasma. (Record no. 22924862)

MARC details
000 -LEADER
fixed length control field 00919 a2200229 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250516161402.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 201308s 0 0 eng d
022 ## - INTERNATIONAL STANDARD SERIAL NUMBER
International Standard Serial Number 1533-4880
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1166/jnn.2013.7012
Source of number or code doi
040 ## - CATALOGING SOURCE
Original cataloging agency NLM
Language of cataloging eng
Transcribing agency NLM
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Park, Seung-Gon
264 #0 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Date of production, publication, distribution, manufacture, or copyright notice 20130807
245 00 - TITLE STATEMENT
Title Electrical properties of Ta(Si)N films prepared by atomic layer deposition from tert-butylimido-tris-diethylamido tantalum, silane and hydrogen plasma.
Medium [electronic resource]
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. Journal of nanoscience and nanotechnology
Date of publication, distribution, etc. Jun 2013
300 ## - PHYSICAL DESCRIPTION
Extent 4097-100 p.
Other physical details digital
500 ## - GENERAL NOTE
General note Publication Type: Journal Article
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Woo, Hee-Gweon
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Sunwoo, Changshin
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Kim, Do-Heyoung
773 0# - HOST ITEM ENTRY
Title Journal of nanoscience and nanotechnology
Related parts vol. 13
-- no. 6
-- p. 4097-100
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.1166/jnn.2013.7012">https://doi.org/10.1166/jnn.2013.7012</a>
Public note Available from publisher's website

No items available.