Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry. [electronic resource]
By: Contributor(s): Producer: 20090312Description: 66-9 p. digitalISSN:- 0968-4328
Publication Type: Journal Article
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Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry.
APA
Ichihara C., Kawakami N., Yasuno S., Hino A., Fujikawa K., Kobayashi A., Ochi M., Gotoh H. & Kugimiya T. (20090312). Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry. : Micron (Oxford, England : 1993).
Chicago
Ichihara Chikara, Kawakami Nobuyuki, Yasuno Satoshi, Hino Aya, Fujikawa Kazuhisa, Kobayashi Akira, Ochi Mototaka, Gotoh Hiroshi and Kugimiya Toshihiro. 20090312. Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry. : Micron (Oxford, England : 1993).
Harvard
Ichihara C., Kawakami N., Yasuno S., Hino A., Fujikawa K., Kobayashi A., Ochi M., Gotoh H. and Kugimiya T. (20090312). Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry. : Micron (Oxford, England : 1993).
MLA
Ichihara Chikara, Kawakami Nobuyuki, Yasuno Satoshi, Hino Aya, Fujikawa Kazuhisa, Kobayashi Akira, Ochi Mototaka, Gotoh Hiroshi and Kugimiya Toshihiro. Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry. : Micron (Oxford, England : 1993). 20090312.