APA

Ichihara C., Kawakami N., Yasuno S., Hino A., Fujikawa K., Kobayashi A., Ochi M., Gotoh H. & Kugimiya T. (20090312). Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry. : Micron (Oxford, England : 1993).

Chicago

Ichihara Chikara, Kawakami Nobuyuki, Yasuno Satoshi, Hino Aya, Fujikawa Kazuhisa, Kobayashi Akira, Ochi Mototaka, Gotoh Hiroshi and Kugimiya Toshihiro. 20090312. Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry. : Micron (Oxford, England : 1993).

Harvard

Ichihara C., Kawakami N., Yasuno S., Hino A., Fujikawa K., Kobayashi A., Ochi M., Gotoh H. and Kugimiya T. (20090312). Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry. : Micron (Oxford, England : 1993).

MLA

Ichihara Chikara, Kawakami Nobuyuki, Yasuno Satoshi, Hino Aya, Fujikawa Kazuhisa, Kobayashi Akira, Ochi Mototaka, Gotoh Hiroshi and Kugimiya Toshihiro. Characterization of interface of Al-Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry. : Micron (Oxford, England : 1993). 20090312.