Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter. [electronic resource]

By: Contributor(s): Producer: 20180724Description: 36962-36970 p. digitalISSN:
  • 1944-8252
Online resources: In: ACS applied materials & interfaces vol. 9
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Publication Type: Journal Article

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