Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter.

Goh, Youngin

Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter. [electronic resource] - ACS applied materials & interfaces Oct 2017 - 36962-36970 p. digital

Publication Type: Journal Article

1944-8252

10.1021/acsami.7b08065 doi