Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device. [electronic resource]

By: Contributor(s): Producer: 20210609Description: 6031-6035 p. digitalISSN:
  • 1533-4880
Subject(s): Online resources: In: Journal of nanoscience and nanotechnology vol. 19
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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