Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device.

Choi, Hyun-Seok

Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device. [electronic resource] - Journal of nanoscience and nanotechnology 10 2019 - 6031-6035 p. digital

Publication Type: Journal Article; Research Support, Non-U.S. Gov't

1533-4880

10.1166/jnn.2019.17000 doi


Gallium
Indium
Zinc
Zinc Oxide