Breakdown Voltage Enhancement in AlGaN/GaN High-Electron Mobility Transistor by Optimizing Gate Field-Plate Structure. [electronic resource]

By: Contributor(s): Publication details: Journal of nanoscience and nanotechnology Apr 2019Description: 2298-2301 p. digitalISSN:
  • 1533-4880
Online resources: In: Journal of nanoscience and nanotechnology vol. 19
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Publication Type: Journal Article

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