Breakdown Voltage Enhancement in AlGaN/GaN High-Electron Mobility Transistor by Optimizing Gate Field-Plate Structure.

Park, Ye-Jin

Breakdown Voltage Enhancement in AlGaN/GaN High-Electron Mobility Transistor by Optimizing Gate Field-Plate Structure. [electronic resource] - Journal of nanoscience and nanotechnology Apr 2019 - 2298-2301 p. digital

Publication Type: Journal Article

1533-4880

10.1166/jnn.2019.15991 doi