Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating. [electronic resource]

By: Contributor(s): Publication details: Science and technology of advanced materials 2017Description: 294-306 p. digitalISSN:
  • 1468-6996
Online resources: In: Science and technology of advanced materials vol. 18
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Publication Type: Journal Article

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