Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating. (Record no. 27232109)

MARC details
000 -LEADER
fixed length control field 00904 a2200229 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250517155348.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field ####s 0 0 eng d
022 ## - INTERNATIONAL STANDARD SERIAL NUMBER
International Standard Serial Number 1468-6996
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1080/14686996.2017.1312520
Source of number or code doi
040 ## - CATALOGING SOURCE
Original cataloging agency NLM
Language of cataloging eng
Transcribing agency NLM
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Sakuraba, Masao
245 00 - TITLE STATEMENT
Title Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating.
Medium [electronic resource]
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. Science and technology of advanced materials
Date of publication, distribution, etc. 2017
300 ## - PHYSICAL DESCRIPTION
Extent 294-306 p.
Other physical details digital
500 ## - GENERAL NOTE
General note Publication Type: Journal Article
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Sugawara, Katsutoshi
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Nosaka, Takayuki
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Akima, Hisanao
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Sato, Shigeo
773 0# - HOST ITEM ENTRY
Title Science and technology of advanced materials
Related parts vol. 18
-- no. 1
-- p. 294-306
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.1080/14686996.2017.1312520">https://doi.org/10.1080/14686996.2017.1312520</a>
Public note Available from publisher's website

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