Spiral growth without dislocations: molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001). [electronic resource]

By: Contributor(s): Producer: 20121228Description: 115501 p. digitalISSN:
  • 1079-7114
Online resources: In: Physical review letters vol. 108
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Publication Type: Journal Article

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