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Spiral growth without dislocations: molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001).

Liu, Y

Spiral growth without dislocations: molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001). [electronic resource] - Physical review letters Mar 2012 - 115501 p. digital

Publication Type: Journal Article

ISSN: 1079-7114

Standard No.: 10.1103/PhysRevLett.108.115501 doi

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