Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate. (Record no. 28297085)

MARC details
000 -LEADER
fixed length control field 00974 a2200277 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250517212103.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field ####s 0 0 eng d
022 ## - INTERNATIONAL STANDARD SERIAL NUMBER
International Standard Serial Number 1613-6829
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1002/smll.201704062
Source of number or code doi
040 ## - CATALOGING SOURCE
Original cataloging agency NLM
Language of cataloging eng
Transcribing agency NLM
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Kim, Sungjun
245 00 - TITLE STATEMENT
Title Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.
Medium [electronic resource]
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. Small (Weinheim an der Bergstrasse, Germany)
Date of publication, distribution, etc. May 2018
300 ## - PHYSICAL DESCRIPTION
Extent e1704062 p.
Other physical details digital
500 ## - GENERAL NOTE
General note Publication Type: Journal Article
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Jung, Sunghun
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Kim, Min-Hwi
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Chen, Ying-Chen
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Chang, Yao-Feng
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Ryoo, Kyung-Chang
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Cho, Seongjae
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Lee, Jong-Ho
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Park, Byung-Gook
773 0# - HOST ITEM ENTRY
Title Small (Weinheim an der Bergstrasse, Germany)
Related parts vol. 14
-- no. 19
-- p. e1704062
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="https://doi.org/10.1002/smll.201704062">https://doi.org/10.1002/smll.201704062</a>
Public note Available from publisher's website

No items available.