Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

Kim, Sungjun

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate. [electronic resource] - Small (Weinheim an der Bergstrasse, Germany) May 2018 - e1704062 p. digital

Publication Type: Journal Article

ISSN: 1613-6829

Standard No.: 10.1002/smll.201704062 doi

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

APA

Kim S., Jung S., Kim M., Chen Y., Chang Y., Ryoo K., Cho S., Lee J. & Park B. (2018). Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate. : Small (Weinheim an der Bergstrasse, Germany).

Chicago

Kim Sungjun, Jung Sunghun, Kim Min-Hwi, Chen Ying-Chen, Chang Yao-Feng, Ryoo Kyung-Chang, Cho Seongjae, Lee Jong-Ho and Park Byung-Gook. 2018. Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate. : Small (Weinheim an der Bergstrasse, Germany).

Harvard

Kim S., Jung S., Kim M., Chen Y., Chang Y., Ryoo K., Cho S., Lee J. and Park B. (2018). Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate. : Small (Weinheim an der Bergstrasse, Germany).

MLA

Kim Sungjun, Jung Sunghun, Kim Min-Hwi, Chen Ying-Chen, Chang Yao-Feng, Ryoo Kyung-Chang, Cho Seongjae, Lee Jong-Ho and Park Byung-Gook. Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate. : Small (Weinheim an der Bergstrasse, Germany). 2018.

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