Electronic structure analysis for group III acceptors in Ge under stress considering screening effect and central-cell correction.
Wang, T H
Electronic structure analysis for group III acceptors in Ge under stress considering screening effect and central-cell correction. [electronic resource] - Journal of physics. Condensed matter : an Institute of Physics journal Aug 2009 - 335801 p. digital
Publication Type: Journal Article
1361-648X
10.1088/0953-8984/21/33/335801 doi
Electronic structure analysis for group III acceptors in Ge under stress considering screening effect and central-cell correction. [electronic resource] - Journal of physics. Condensed matter : an Institute of Physics journal Aug 2009 - 335801 p. digital
Publication Type: Journal Article
1361-648X
10.1088/0953-8984/21/33/335801 doi