Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. [electronic resource]
By: Contributor(s): Publication details: Scientific reports Jul 2019Description: 10301 p. digitalISSN:- 2045-2322
Publication Type: Journal Article
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Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics.
APA
Fatahilah M. F., Yu F., Strempel K., Römer F., Maradan D., Meneghini M., Bakin A., Hohls F., Schumacher H. W., Witzigmann B., Waag A. & Wasisto H. S. (2019). Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. : Scientific reports.
Chicago
Fatahilah Muhammad Fahlesa, Yu Feng, Strempel Klaas, Römer Friedhard, Maradan Dario, Meneghini Matteo, Bakin Andrey, Hohls Frank, Schumacher Hans Werner, Witzigmann Bernd, Waag Andreas and Wasisto Hutomo Suryo. 2019. Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. : Scientific reports.
Harvard
Fatahilah M. F., Yu F., Strempel K., Römer F., Maradan D., Meneghini M., Bakin A., Hohls F., Schumacher H. W., Witzigmann B., Waag A. and Wasisto H. S. (2019). Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. : Scientific reports.
MLA
Fatahilah Muhammad Fahlesa, Yu Feng, Strempel Klaas, Römer Friedhard, Maradan Dario, Meneghini Matteo, Bakin Andrey, Hohls Frank, Schumacher Hans Werner, Witzigmann Bernd, Waag Andreas and Wasisto Hutomo Suryo. Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. : Scientific reports. 2019.