APA

Fatahilah M. F., Yu F., Strempel K., Römer F., Maradan D., Meneghini M., Bakin A., Hohls F., Schumacher H. W., Witzigmann B., Waag A. & Wasisto H. S. (2019). Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. : Scientific reports.

Chicago

Fatahilah Muhammad Fahlesa, Yu Feng, Strempel Klaas, Römer Friedhard, Maradan Dario, Meneghini Matteo, Bakin Andrey, Hohls Frank, Schumacher Hans Werner, Witzigmann Bernd, Waag Andreas and Wasisto Hutomo Suryo. 2019. Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. : Scientific reports.

Harvard

Fatahilah M. F., Yu F., Strempel K., Römer F., Maradan D., Meneghini M., Bakin A., Hohls F., Schumacher H. W., Witzigmann B., Waag A. and Wasisto H. S. (2019). Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. : Scientific reports.

MLA

Fatahilah Muhammad Fahlesa, Yu Feng, Strempel Klaas, Römer Friedhard, Maradan Dario, Meneghini Matteo, Bakin Andrey, Hohls Frank, Schumacher Hans Werner, Witzigmann Bernd, Waag Andreas and Wasisto Hutomo Suryo. Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. : Scientific reports. 2019.