Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers. [electronic resource]

By: Contributor(s): Producer: 20110414Description: 27136-41 p. digitalISSN:
  • 1094-4087
Subject(s): Online resources: In: Optics express vol. 18
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Publication Type: Evaluation Study; Journal Article; Research Support, Non-U.S. Gov't

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