Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers.
Kim, C S
Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers. [electronic resource] - Optics express Dec 2010 - 27136-41 p. digital
Publication Type: Evaluation Study; Journal Article; Research Support, Non-U.S. Gov't
1094-4087
10.1364/OE.18.027136 doi
Equipment Failure Analysis--methods
Gallium--chemistry
Indium--chemistry
Lasers, Semiconductor
Photometry--methods
Protons
Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers. [electronic resource] - Optics express Dec 2010 - 27136-41 p. digital
Publication Type: Evaluation Study; Journal Article; Research Support, Non-U.S. Gov't
1094-4087
10.1364/OE.18.027136 doi
Equipment Failure Analysis--methods
Gallium--chemistry
Indium--chemistry
Lasers, Semiconductor
Photometry--methods
Protons