000 | 00719 a2200169 4500 | ||
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005 | 20250513164046.0 | ||
008 | ####s 0 0 eng d | ||
022 | _a0163-1829 | ||
024 | 7 |
_a10.1103/physrevb.54.2505 _2doi |
|
040 |
_aNLM _beng _cNLM |
||
245 | 0 | 0 |
_aElectronic structure and hyperfine interactions for deep donors and vacancies in II-VI compound semiconductors. _h[electronic resource] |
260 |
_bPhysical review. B, Condensed matter _cJul 1996 |
||
300 |
_a2505-2511 p. _bdigital |
||
500 | _aPublication Type: Journal Article | ||
773 | 0 |
_tPhysical review. B, Condensed matter _gvol. 54 _gno. 4 _gp. 2505-2511 |
|
856 | 4 | 0 |
_uhttps://doi.org/10.1103/physrevb.54.2505 _zAvailable from publisher's website |
999 |
_c9947510 _d9947510 |