000 00799 a2200217 4500
005 20250518071651.0
008 ####s 0 0 eng d
022 _a1996-1944
024 7 _a10.3390/ma12223795
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aChrostowski, Marta
245 0 0 _aAnnealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD.
_h[electronic resource]
260 _bMaterials (Basel, Switzerland)
_cNov 2019
500 _aPublication Type: Journal Article
700 1 _aAlvarez, José
700 1 _aLe Donne, Alessia
700 1 _aBinetti, Simona
700 1 _aRoca I Cabarrocas, Pere
773 0 _tMaterials (Basel, Switzerland)
_gvol. 12
_gno. 22
856 4 0 _uhttps://doi.org/10.3390/ma12223795
_zAvailable from publisher's website
999 _c30337363
_d30337363