000 01112 a2200337 4500
005 20250518065438.0
264 0 _c20191104
008 201911s 0 0 eng d
022 _a1094-4087
024 7 _a10.1364/OE.27.026924
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aXu, Shengqiang
245 0 0 _aIntegrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band.
_h[electronic resource]
260 _bOptics express
_cSep 2019
300 _a26924-26939 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aHan, Kaizhen
700 1 _aHuang, Yi-Chiau
700 1 _aLee, Kwang Hong
700 1 _aKang, Yuye
700 1 _aMasudy-Panah, Saeid
700 1 _aWu, Ying
700 1 _aLei, Dian
700 1 _aZhao, Yunshan
700 1 _aWang, Hong
700 1 _aTan, Chuan Seng
700 1 _aGong, Xiao
700 1 _aYeo, Yee-Chia
773 0 _tOptics express
_gvol. 27
_gno. 19
_gp. 26924-26939
856 4 0 _uhttps://doi.org/10.1364/OE.27.026924
_zAvailable from publisher's website
999 _c30261473
_d30261473