000 00955 a2200253 4500
005 20250518062208.0
008 ####s 0 0 eng d
022 _a1361-648X
024 7 _a10.1088/1361-648X/ab47a5
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aLiu, Huating
245 0 0 _aBand offsets engineering in asymmetric Janus bilayer transition-metal dichalcogenides.
_h[electronic resource]
260 _bJournal of physics. Condensed matter : an Institute of Physics journal
_cJan 2020
300 _a035502 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aHuang, Zongyu
700 1 _aWu, Peng
700 1 _aXue, Wenming
700 1 _aHe, Chaoyu
700 1 _aQi, Xiang
700 1 _aZhong, Jianxin
773 0 _tJournal of physics. Condensed matter : an Institute of Physics journal
_gvol. 32
_gno. 3
_gp. 035502
856 4 0 _uhttps://doi.org/10.1088/1361-648X/ab47a5
_zAvailable from publisher's website
999 _c30144252
_d30144252