000 01022 a2200289 4500
005 20250518061404.0
264 0 _c20191003
008 201910s 0 0 eng d
022 _a1944-8252
024 7 _a10.1021/acsami.9b08316
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aLee, Hojin
245 0 0 _aPassivation of Deep-Level Defects by Cesium Fluoride Post-Deposition Treatment for Improved Device Performance of Cu(In,Ga)Se
_h[electronic resource]
260 _bACS applied materials & interfaces
_cOct 2019
300 _a35653-35660 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aJang, Yuseong
700 1 _aNam, Sung-Wook
700 1 _aJung, Chanwon
700 1 _aChoi, Pyuck-Pa
700 1 _aGwak, Jihye
700 1 _aYun, Jae Ho
700 1 _aKim, Kihwan
700 1 _aShin, Byungha
773 0 _tACS applied materials & interfaces
_gvol. 11
_gno. 39
_gp. 35653-35660
856 4 0 _uhttps://doi.org/10.1021/acsami.9b08316
_zAvailable from publisher's website
999 _c30116821
_d30116821