| 000 | 00844 a2200241 4500 | ||
|---|---|---|---|
| 005 | 20250518060023.0 | ||
| 264 | 0 | _c20191104 | |
| 008 | 201911s 0 0 eng d | ||
| 022 | _a1361-6528 | ||
| 024 | 7 |
_a10.1088/1361-6528/ab40d6 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aBalakirev, Sergey V | |
| 245 | 0 | 0 |
_aMechanism of nucleation and critical layer formation during In/GaAs droplet epitaxy. _h[electronic resource] |
| 260 |
_bNanotechnology _cDec 2019 |
||
| 300 |
_a505601 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aSolodovnik, Maxim S | |
| 700 | 1 | _aEremenko, Mikhail M | |
| 700 | 1 | _aKonoplev, Boris G | |
| 700 | 1 | _aAgeev, Oleg A | |
| 773 | 0 |
_tNanotechnology _gvol. 30 _gno. 50 _gp. 505601 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1088/1361-6528/ab40d6 _zAvailable from publisher's website |
| 999 |
_c30071711 _d30071711 |
||