000 00937 a2200241 4500
005 20250518043519.0
008 ####s 0 0 eng d
022 _a2045-2322
024 7 _a10.1038/s41598-019-44948-z
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aYu, Byoung-Soo
245 0 0 _aWearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
_h[electronic resource]
260 _bScientific reports
_cJun 2019
300 _a8416 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aJeon, Jun-Young
700 1 _aKang, Byeong-Cheol
700 1 _aLee, Woobin
700 1 _aKim, Yong-Hoon
700 1 _aHa, Tae-Jun
773 0 _tScientific reports
_gvol. 9
_gno. 1
_gp. 8416
856 4 0 _uhttps://doi.org/10.1038/s41598-019-44948-z
_zAvailable from publisher's website
999 _c29782456
_d29782456