| 000 | 01011 a2200253 4500 | ||
|---|---|---|---|
| 005 | 20250518035000.0 | ||
| 008 | ####s 0 0 eng d | ||
| 022 | _a1533-4880 | ||
| 024 | 7 |
_a10.1166/jnn.2019.16992 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
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| 100 | 1 | _aSong, Hyeong-Sub | |
| 245 | 0 | 0 |
_aInvestigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate Stacks. _h[electronic resource] |
| 260 |
_bJournal of nanoscience and nanotechnology _cOct 2019 |
||
| 300 |
_a6131-6134 p. _bdigital |
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| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aKim, So-Yeong | |
| 700 | 1 | _aLim, Dong-Hwan | |
| 700 | 1 | _aKwon, Sung-Kyu | |
| 700 | 1 | _aChoi, Chang-Hwan | |
| 700 | 1 | _aLee, Ga-Won | |
| 700 | 1 | _aLee, Hi-Deok | |
| 773 | 0 |
_tJournal of nanoscience and nanotechnology _gvol. 19 _gno. 10 _gp. 6131-6134 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1166/jnn.2019.16992 _zAvailable from publisher's website |
| 999 |
_c29629659 _d29629659 |
||