| 000 | 00980 a2200253 4500 | ||
|---|---|---|---|
| 005 | 20250518034959.0 | ||
| 264 | 0 | _c20210609 | |
| 008 | 202106s 0 0 eng d | ||
| 022 | _a1533-4880 | ||
| 024 | 7 |
_a10.1166/jnn.2019.17000 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aChoi, Hyun-Seok | |
| 245 | 0 | 0 |
_aInvestigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device. _h[electronic resource] |
| 260 |
_bJournal of nanoscience and nanotechnology _c10 2019 |
||
| 300 |
_a6031-6035 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't | ||
| 650 | 0 | 4 | _aGallium |
| 650 | 0 | 4 | _aIndium |
| 650 | 0 | 4 | _aZinc |
| 650 | 0 | 4 | _aZinc Oxide |
| 700 | 1 | _aCho, Won-Ju | |
| 773 | 0 |
_tJournal of nanoscience and nanotechnology _gvol. 19 _gno. 10 _gp. 6031-6035 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1166/jnn.2019.17000 _zAvailable from publisher's website |
| 999 |
_c29629640 _d29629640 |
||