| 000 | 00896 a2200253 4500 | ||
|---|---|---|---|
| 005 | 20250518002151.0 | ||
| 264 | 0 | _c20181115 | |
| 008 | 201811s 0 0 eng d | ||
| 022 | _a1944-8252 | ||
| 024 | 7 |
_a10.1021/acsami.8b12768 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aZafar, Zainab | |
| 245 | 0 | 0 |
_aNonvolatile Memory Based on Molecular Ferroelectric/Graphene Field Effect Transistor. _h[electronic resource] |
| 260 |
_bACS applied materials & interfaces _cNov 2018 |
||
| 300 |
_a39187-39193 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aZafar, Amina | |
| 700 | 1 | _aWang, Wen-Hui | |
| 700 | 1 | _aLiu, Mei-Ying | |
| 700 | 1 | _aNi, Zhen-Hua | |
| 700 | 1 | _aYou, Yu-Meng | |
| 773 | 0 |
_tACS applied materials & interfaces _gvol. 10 _gno. 45 _gp. 39187-39193 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1021/acsami.8b12768 _zAvailable from publisher's website |
| 999 |
_c28913507 _d28913507 |
||