| 000 | 00804 a2200217 4500 | ||
|---|---|---|---|
| 005 | 20250517230055.0 | ||
| 008 | ####s 0 0 eng d | ||
| 022 | _a1931-7573 | ||
| 024 | 7 |
_a10.1186/s11671-018-2619-x _2doi |
|
| 040 |
_aNLM _beng _cNLM |
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| 100 | 1 | _aKao, Yun-Feng | |
| 245 | 0 | 0 |
_aA Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model. _h[electronic resource] |
| 260 |
_bNanoscale research letters _cJul 2018 |
||
| 300 |
_a213 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aZhuang, Wei Cheng | |
| 700 | 1 | _aLin, Chrong-Jung | |
| 700 | 1 | _aKing, Ya-Chin | |
| 773 | 0 |
_tNanoscale research letters _gvol. 13 _gno. 1 _gp. 213 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1186/s11671-018-2619-x _zAvailable from publisher's website |
| 999 |
_c28638441 _d28638441 |
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