000 00936 a2200265 4500
005 20250517225034.0
008 ####s 0 0 eng d
022 _a1931-7573
024 7 _a10.1186/s11671-018-2612-4
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aBenyahia, D
245 0 0 _aElectrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy.
_h[electronic resource]
260 _bNanoscale research letters
_cJul 2018
300 _a196 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aKubiszyn, Ł
700 1 _aMichalczewski, K
700 1 _aBoguski, J
700 1 _aKębłowski, A
700 1 _aMartyniuk, P
700 1 _aPiotrowski, J
700 1 _aRogalski, A
773 0 _tNanoscale research letters
_gvol. 13
_gno. 1
_gp. 196
856 4 0 _uhttps://doi.org/10.1186/s11671-018-2612-4
_zAvailable from publisher's website
999 _c28604427
_d28604427