000 00974 a2200277 4500
005 20250517212103.0
008 ####s 0 0 eng d
022 _a1613-6829
024 7 _a10.1002/smll.201704062
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aKim, Sungjun
245 0 0 _aScaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.
_h[electronic resource]
260 _bSmall (Weinheim an der Bergstrasse, Germany)
_cMay 2018
300 _ae1704062 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aJung, Sunghun
700 1 _aKim, Min-Hwi
700 1 _aChen, Ying-Chen
700 1 _aChang, Yao-Feng
700 1 _aRyoo, Kyung-Chang
700 1 _aCho, Seongjae
700 1 _aLee, Jong-Ho
700 1 _aPark, Byung-Gook
773 0 _tSmall (Weinheim an der Bergstrasse, Germany)
_gvol. 14
_gno. 19
_gp. e1704062
856 4 0 _uhttps://doi.org/10.1002/smll.201704062
_zAvailable from publisher's website
999 _c28297085
_d28297085