| 000 | 00898 a2200241 4500 | ||
|---|---|---|---|
| 005 | 20250517190453.0 | ||
| 008 | ####s 0 0 eng d | ||
| 022 | _a2045-2322 | ||
| 024 | 7 |
_a10.1038/s41598-017-16845-w _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aChang, Hsun-Ming | |
| 245 | 0 | 0 |
_aGermanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance. _h[electronic resource] |
| 260 |
_bScientific reports _c12 2017 |
||
| 300 |
_a16857 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't | ||
| 700 | 1 | _aCharnas, Adam | |
| 700 | 1 | _aLin, Yu-Ming | |
| 700 | 1 | _aYe, Peide D | |
| 700 | 1 | _aWu, Chih-I | |
| 700 | 1 | _aWu, Chao-Hsin | |
| 773 | 0 |
_tScientific reports _gvol. 7 _gno. 1 _gp. 16857 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1038/s41598-017-16845-w _zAvailable from publisher's website |
| 999 |
_c27853019 _d27853019 |
||