| 000 | 00958 a2200253 4500 | ||
|---|---|---|---|
| 005 | 20250517175914.0 | ||
| 264 | 0 | _c20180724 | |
| 008 | 201807s 0 0 eng d | ||
| 022 | _a1944-8252 | ||
| 024 | 7 |
_a10.1021/acsami.7b08065 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aGoh, Youngin | |
| 245 | 0 | 0 |
_aEfficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter. _h[electronic resource] |
| 260 |
_bACS applied materials & interfaces _cOct 2017 |
||
| 300 |
_a36962-36970 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aAhn, Jaehan | |
| 700 | 1 | _aLee, Jeong Rak | |
| 700 | 1 | _aPark, Wan Woo | |
| 700 | 1 | _aKo Park, Sang-Hee | |
| 700 | 1 | _aJeon, Sanghun | |
| 773 | 0 |
_tACS applied materials & interfaces _gvol. 9 _gno. 42 _gp. 36962-36970 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1021/acsami.7b08065 _zAvailable from publisher's website |
| 999 |
_c27638359 _d27638359 |
||