000 00801 a2200205 4500
005 20250517174216.0
264 0 _c20180205
008 201802s 0 0 eng d
022 _a1463-9084
024 7 _a10.1039/c7cp04914e
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aKonashuk, A S
245 0 0 _aRedistribution of valence and conduction band states depending on the method of modification of SiO
_h[electronic resource]
260 _bPhysical chemistry chemical physics : PCCP
_cOct 2017
300 _a26201-26209 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aFilatova, E O
773 0 _tPhysical chemistry chemical physics : PCCP
_gvol. 19
_gno. 38
_gp. 26201-26209
856 4 0 _uhttps://doi.org/10.1039/c7cp04914e
_zAvailable from publisher's website
999 _c27584809
_d27584809