000 00799 a2200229 4500
005 20250517170931.0
264 0 _c20180720
008 201807s 0 0 eng d
022 _a2040-3372
024 7 _a10.1039/c7nr01840a
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aOh, Se-I
245 0 0 _aSelf-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid.
_h[electronic resource]
260 _bNanoscale
_cOct 2017
300 _a15314-15322 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aRani, Janardhanan R
700 1 _aHong, Sung-Min
700 1 _aJang, Jae-Hyung
773 0 _tNanoscale
_gvol. 9
_gno. 40
_gp. 15314-15322
856 4 0 _uhttps://doi.org/10.1039/c7nr01840a
_zAvailable from publisher's website
999 _c27477411
_d27477411