000 | 00799 a2200229 4500 | ||
---|---|---|---|
005 | 20250517170931.0 | ||
264 | 0 | _c20180720 | |
008 | 201807s 0 0 eng d | ||
022 | _a2040-3372 | ||
024 | 7 |
_a10.1039/c7nr01840a _2doi |
|
040 |
_aNLM _beng _cNLM |
||
100 | 1 | _aOh, Se-I | |
245 | 0 | 0 |
_aSelf-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid. _h[electronic resource] |
260 |
_bNanoscale _cOct 2017 |
||
300 |
_a15314-15322 p. _bdigital |
||
500 | _aPublication Type: Journal Article | ||
700 | 1 | _aRani, Janardhanan R | |
700 | 1 | _aHong, Sung-Min | |
700 | 1 | _aJang, Jae-Hyung | |
773 | 0 |
_tNanoscale _gvol. 9 _gno. 40 _gp. 15314-15322 |
|
856 | 4 | 0 |
_uhttps://doi.org/10.1039/c7nr01840a _zAvailable from publisher's website |
999 |
_c27477411 _d27477411 |