000 00799 a2200205 4500
005 20250517170655.0
264 0 _c20190221
008 201902s 0 0 eng d
022 _a2045-2322
024 7 _a10.1038/s41598-017-06613-1
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aWoo, Hyunsuk
245 0 0 _aMicrosecond Pulse I-V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor.
_h[electronic resource]
260 _bScientific reports
_c08 2017
300 _a8235 p.
_bdigital
500 _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't
700 1 _aJeon, Sanghun
773 0 _tScientific reports
_gvol. 7
_gno. 1
_gp. 8235
856 4 0 _uhttps://doi.org/10.1038/s41598-017-06613-1
_zAvailable from publisher's website
999 _c27468859
_d27468859