| 000 | 00904 a2200229 4500 | ||
|---|---|---|---|
| 005 | 20250517155348.0 | ||
| 008 | ####s 0 0 eng d | ||
| 022 | _a1468-6996 | ||
| 024 | 7 |
_a10.1080/14686996.2017.1312520 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aSakuraba, Masao | |
| 245 | 0 | 0 |
_aCarrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating. _h[electronic resource] |
| 260 |
_bScience and technology of advanced materials _c2017 |
||
| 300 |
_a294-306 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aSugawara, Katsutoshi | |
| 700 | 1 | _aNosaka, Takayuki | |
| 700 | 1 | _aAkima, Hisanao | |
| 700 | 1 | _aSato, Shigeo | |
| 773 | 0 |
_tScience and technology of advanced materials _gvol. 18 _gno. 1 _gp. 294-306 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1080/14686996.2017.1312520 _zAvailable from publisher's website |
| 999 |
_c27232109 _d27232109 |
||