| 000 | 00947 a2200301 4500 | ||
|---|---|---|---|
| 005 | 20250517143544.0 | ||
| 264 | 0 | _c20180723 | |
| 008 | 201807s 0 0 eng d | ||
| 022 | _a1361-6528 | ||
| 024 | 7 |
_a10.1088/1361-6528/aa6763 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aLee, Keundong | |
| 245 | 0 | 0 |
_aFlexible resistive random access memory devices by using NiO _h[electronic resource] |
| 260 |
_bNanotechnology _cMay 2017 |
||
| 300 |
_a205202 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aPark, Jong-Woo | |
| 700 | 1 | _aTchoe, Youngbin | |
| 700 | 1 | _aYoon, Jiyoung | |
| 700 | 1 | _aChung, Kunook | |
| 700 | 1 | _aYoon, Hosang | |
| 700 | 1 | _aLee, Sangik | |
| 700 | 1 | _aYoon, Chansoo | |
| 700 | 1 | _aHo Park, Bae | |
| 700 | 1 | _aYi, Gyu-Chul | |
| 773 | 0 |
_tNanotechnology _gvol. 28 _gno. 20 _gp. 205202 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1088/1361-6528/aa6763 _zAvailable from publisher's website |
| 999 |
_c26978063 _d26978063 |
||