000 01147 a2200385 4500
005 20250517142005.0
264 0 _c20180815
008 201808s 0 0 eng d
022 _a2045-2322
024 7 _a10.1038/srep43561
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aHeo, Sung
245 0 0 _aDirect evidence of flat band voltage shift for TiN/LaO or ZrO/SiO
_h[electronic resource]
260 _bScientific reports
_c03 2017
300 _a43561 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aPark, Hyoungsun
700 1 _aKo, Dong-Su
700 1 _aKim, Yong Su
700 1 _aKyoung, Yong Koo
700 1 _aLee, Hyung-Ik
700 1 _aCho, Eunae
700 1 _aLee, Hyo Sug
700 1 _aPark, Gyung-Su
700 1 _aShin, Jai Kwang
700 1 _aLee, Dongjin
700 1 _aLee, Jieun
700 1 _aJung, Kyoungho
700 1 _aJeong, Moonyoung
700 1 _aYamada, Satoru
700 1 _aKang, Hee Jae
700 1 _aChoi, Byoung-Deog
773 0 _tScientific reports
_gvol. 7
_gp. 43561
856 4 0 _uhttps://doi.org/10.1038/srep43561
_zAvailable from publisher's website
999 _c26928091
_d26928091