000 | 00884 a2200253 4500 | ||
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005 | 20250517140011.0 | ||
264 | 0 | _c20180607 | |
008 | 201806s 0 0 eng d | ||
022 | _a1089-7690 | ||
024 | 7 |
_a10.1063/1.4961458 _2doi |
|
040 |
_aNLM _beng _cNLM |
||
100 | 1 | _aMetzler, Dominik | |
245 | 0 | 0 |
_aCharacterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C _h[electronic resource] |
260 |
_bThe Journal of chemical physics _cFeb 2017 |
||
300 |
_a052801 p. _bdigital |
||
500 | _aPublication Type: Journal Article | ||
700 | 1 | _aLi, Chen | |
700 | 1 | _aEngelmann, Sebastian | |
700 | 1 | _aBruce, Robert L | |
700 | 1 | _aJoseph, Eric A | |
700 | 1 | _aOehrlein, Gottlieb S | |
773 | 0 |
_tThe Journal of chemical physics _gvol. 146 _gno. 5 _gp. 052801 |
|
856 | 4 | 0 |
_uhttps://doi.org/10.1063/1.4961458 _zAvailable from publisher's website |
999 |
_c26863115 _d26863115 |