| 000 | 00910 a2200229 4500 | ||
|---|---|---|---|
| 005 | 20250517110644.0 | ||
| 264 | 0 | _c20160811 | |
| 008 | 201608s 0 0 eng d | ||
| 022 | _a1533-4899 | ||
| 024 | 7 |
_a10.1166/jnn.2016.12242 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aJeong, Jae Won | |
| 245 | 0 | 0 |
_aMultiple Negative Differential Resistance Device by Using the Ambipolar Behavior of Tunneling Field Effect Transistor with Fast Switching Characteristics. _h[electronic resource] |
| 260 |
_bJournal of nanoscience and nanotechnology _cMay 2016 |
||
| 300 |
_a4753-7 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aJang, E-San | |
| 700 | 1 | _aShin, Sunhae | |
| 700 | 1 | _aKim, Kyung Rok | |
| 773 | 0 |
_tJournal of nanoscience and nanotechnology _gvol. 16 _gno. 5 _gp. 4753-7 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1166/jnn.2016.12242 _zAvailable from publisher's website |
| 999 |
_c26290111 _d26290111 |
||