| 000 | 00899 a2200229 4500 | ||
|---|---|---|---|
| 005 | 20250517105248.0 | ||
| 264 | 0 | _c20160808 | |
| 008 | 201608s 0 0 eng d | ||
| 022 | _a1533-4899 | ||
| 024 | 7 |
_a10.1166/jnn.2016.11951 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aJang, Sung Hwan | |
| 245 | 0 | 0 |
_aImprovement of Resistive Random Access Memory Device Performance via Embedding of Low-K Dielectric Layer. _h[electronic resource] |
| 260 |
_bJournal of nanoscience and nanotechnology _cFeb 2016 |
||
| 300 |
_a1587-91 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't | ||
| 700 | 1 | _aRyu, Ju Tae | |
| 700 | 1 | _aJung, Hyun Soo | |
| 700 | 1 | _aKim, Tae Whan | |
| 773 | 0 |
_tJournal of nanoscience and nanotechnology _gvol. 16 _gno. 2 _gp. 1587-91 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1166/jnn.2016.11951 _zAvailable from publisher's website |
| 999 |
_c26242467 _d26242467 |
||