000 01089 a2200325 4500
005 20250517100423.0
008 ####s 0 0 eng d
022 _a2045-2322
024 7 _a10.1038/srep27047
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aSummerfield, Alex
245 0 0 _aErratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.
_h[electronic resource]
260 _bScientific reports
_c06 2016
300 _a27047 p.
_bdigital
500 _aPublication Type: Journal Article; Published Erratum
700 1 _aDavies, Andrew
700 1 _aCheng, Tin S
700 1 _aKorolkov, Vladimir V
700 1 _aCho, Yong Jin
700 1 _aMellor, Christopher J
700 1 _aFoxon, C Thomas
700 1 _aKhlobystov, Andrei N
700 1 _aWatanabe, Kenji
700 1 _aTaniguchi, Takashi
700 1 _aEaves, Laurence
700 1 _aNovikov, Sergei V
700 1 _aBeton, Peter H
773 0 _tScientific reports
_gvol. 6
_gp. 27047
856 4 0 _uhttps://doi.org/10.1038/srep27047
_zAvailable from publisher's website
999 _c26083983
_d26083983