000 01163 a2200373 4500
005 20250517071038.0
264 0 _c20160524
008 201605s 0 0 eng d
022 _a1361-6528
024 7 _a10.1088/0957-4484/27/6/065602
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aQiu, Feng
245 0 0 _aAn investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots.
_h[electronic resource]
260 _bNanotechnology
_cFeb 2016
300 _a065602 p.
_bdigital
500 _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't
700 1 _aQiu, Weiyang
700 1 _aLi, Yulian
700 1 _aWang, Xingjun
700 1 _aZhang, Yun
700 1 _aZhou, Xiaohao
700 1 _aLv, Yingfei
700 1 _aSun, Yan
700 1 _aDeng, Huiyong
700 1 _aHu, Shuhong
700 1 _aDai, Ning
700 1 _aWang, Chong
700 1 _aYang, Yu
700 1 _aZhuang, Qiandong
700 1 _aHayne, Manus
700 1 _aKrier, A
773 0 _tNanotechnology
_gvol. 27
_gno. 6
_gp. 065602
856 4 0 _uhttps://doi.org/10.1088/0957-4484/27/6/065602
_zAvailable from publisher's website
999 _c25557539
_d25557539