| 000 | 00790 a2200229 4500 | ||
|---|---|---|---|
| 005 | 20250517045632.0 | ||
| 264 | 0 | _c20151023 | |
| 008 | 201510s 0 0 eng d | ||
| 022 | _a1539-4794 | ||
| 024 | 7 |
_a10.1364/OL.40.003747 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aWu, Cheng-Han | |
| 245 | 0 | 0 |
_a1.1-μm InAs/GaAs quantum-dot light-emitting transistors grown by molecular beam epitaxy. _h[electronic resource] |
| 260 |
_bOptics letters _cAug 2015 |
||
| 300 |
_a3747-9 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aChen, Hsuan-An | |
| 700 | 1 | _aLin, Shih-Yen | |
| 700 | 1 | _aWu, Chao-Hsin | |
| 773 | 0 |
_tOptics letters _gvol. 40 _gno. 16 _gp. 3747-9 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1364/OL.40.003747 _zAvailable from publisher's website |
| 999 |
_c25170452 _d25170452 |
||