000 01182 a2200349 4500
005 20250517032603.0
264 0 _c20150824
008 201508s 0 0 eng d
022 _a1520-5126
024 7 _a10.1021/jacs.5b03151
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aShin, Ha-Chul
245 0 0 _aEpitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor.
_h[electronic resource]
260 _bJournal of the American Chemical Society
_cJun 2015
300 _a6897-905 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aJang, Yamujin
700 1 _aKim, Tae-Hoon
700 1 _aLee, Jun-Hae
700 1 _aOh, Dong-Hwa
700 1 _aAhn, Sung Joon
700 1 _aLee, Jae Hyun
700 1 _aMoon, Youngkwon
700 1 _aPark, Ji-Hoon
700 1 _aYoo, Sung Jong
700 1 _aPark, Chong-Yun
700 1 _aWhang, Dongmok
700 1 _aYang, Cheol-Woong
700 1 _aAhn, Joung Real
773 0 _tJournal of the American Chemical Society
_gvol. 137
_gno. 21
_gp. 6897-905
856 4 0 _uhttps://doi.org/10.1021/jacs.5b03151
_zAvailable from publisher's website
999 _c24900170
_d24900170