000 | 01182 a2200349 4500 | ||
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005 | 20250517032603.0 | ||
264 | 0 | _c20150824 | |
008 | 201508s 0 0 eng d | ||
022 | _a1520-5126 | ||
024 | 7 |
_a10.1021/jacs.5b03151 _2doi |
|
040 |
_aNLM _beng _cNLM |
||
100 | 1 | _aShin, Ha-Chul | |
245 | 0 | 0 |
_aEpitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor. _h[electronic resource] |
260 |
_bJournal of the American Chemical Society _cJun 2015 |
||
300 |
_a6897-905 p. _bdigital |
||
500 | _aPublication Type: Journal Article | ||
700 | 1 | _aJang, Yamujin | |
700 | 1 | _aKim, Tae-Hoon | |
700 | 1 | _aLee, Jun-Hae | |
700 | 1 | _aOh, Dong-Hwa | |
700 | 1 | _aAhn, Sung Joon | |
700 | 1 | _aLee, Jae Hyun | |
700 | 1 | _aMoon, Youngkwon | |
700 | 1 | _aPark, Ji-Hoon | |
700 | 1 | _aYoo, Sung Jong | |
700 | 1 | _aPark, Chong-Yun | |
700 | 1 | _aWhang, Dongmok | |
700 | 1 | _aYang, Cheol-Woong | |
700 | 1 | _aAhn, Joung Real | |
773 | 0 |
_tJournal of the American Chemical Society _gvol. 137 _gno. 21 _gp. 6897-905 |
|
856 | 4 | 0 |
_uhttps://doi.org/10.1021/jacs.5b03151 _zAvailable from publisher's website |
999 |
_c24900170 _d24900170 |